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The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Application Note No. 069
Features * Versatile, easy-to-use LNA MMIC in 70 GHz ft SiGe technology 3 * 50 matched output, pre-matched input * Integrated output DC blocking capacitor, 4 integrated RF choke on internal bias network * Low current consumption of 6 mA SOT-343 * "Shutdown" or "Sleep" mode * Unconditionally stable * Low external component count * Exceptional noise figure: 1.1 dB in a PC board at 2 GHz Applications * Low Noise Amplifier for 800/900 MHz, GSM900, 900 MHz ISM, DCS1800, GPS, 1900 MHz PCS, 2.1 GHz UMTS and 2.4 GHz Wireless LAN * Long-Range Bluetooth applications requiring improved system sensitivity via use of an external LNA Introduction The BGA622 is an easy-to-use, versatile and flexible low-cost Low Noise Amplifier (LNA) MMIC designed for the high linearity and sensitivity requirements of existing and next - generation wireless applications including GSM, 900 MHz ISM, GPS, UMTS and Wireless LANs. Based on Infineon's cost-effective 70 GHz fT Silicon-Germanium (SiGe) B7HF bipolar process technology, the BGA622 offers a 1.1 dB noise figure and 15 dB of gain at 2.1 GHz for high performance, cost-effective mobile communications applications. BGA622 offers impressive noise figure performance, particularly for a lowcost, integrated MMIC. In the past, in-circuit noise figures approaching 1.0 dB at 2 GHz were possible only for more expensive GaAs-based, fully discrete solutions utilizing narrowband impedance matching and higher external parts count. The BGA622 combines the excellent noise figure advantages of a high-performance discrete solution with the ease-of-use, low parts count, and diminished risk and reduced system development time made possible by a MMIC approach.
2 1
Application Note
1
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Introduction The new LNA incorporates a 50 matched output with an integrated output DC blocking capacitor. The broadband output match simplifies integration issues with external imagestripping filters. The input is pre-matched, requiring an external DC blocking capacitor. An integrated, on-chip inductor eliminates the need for an external RF choke on the voltage supply pin. The noise figure of BGA622 is relatively insensitive to the input impedance matching approach taken by the end user, reducing development time and risk. A low supply current of 6 mA at 2.75 V and an integrated on/off feature provides for low power consumption and increased stand by time for 3G cellular handsets or other portable, battery-operated wireless applications.
Vcc,4
In,1 Out,3
On/Off 10k
GND,2
Figure 1
BGA622's Equivalent Circuit
In, 1 GND, 2 Top View
4, Vcc 3, Out
Figure 2
Pin Connections
Application Note
2
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Overview Overview The BGA622 is shown in three different configurations for the frequency band between 1700 MHz and 2500 MHz which covers the PCN/PCS, UMTS and BlueTooth frequencies at 1800 / 1900 MHz, 2.14 GHz and 2.4 GHz: * Configuration A: minimum parts count, power down option is not used * Configuration B: BGA622 with power down option * Configuration C: BGA622 with power down option and increased IIP3 The following table shows the measured performance of these three circuits. All measurement values presented in this application note include losses of both PCB and connectors - in other words, the reference planes used for measurements are the PCB's RF SMA connectors. Noise figure and gain results shown do not have any PCB loss extracted from them. Performance Overview Parameter Supply voltage Supply current Gain Configuration A 2.75 V 5.5 mA Configuration B 2.75 V 5.4 mA Configuration C 2.75 V 5.4 mA
14.8 dB @ 1.85 GHz 14.5 dB @ 1.85 GHz 14.6 dB @ 1.85 GHz 13.8 dB @ 2.14 GHz 13.5 dB @ 2.14 GHz 13.5 dB @ 2.14 GHz 12.6 dB @ 2.4 GHz 12.5 dB @ 2.4 GHz 12.5 dB @ 2.4 GHz 1.2 dB @ 1.85 GHz 1.2 dB @ 1.85 GHz 1.2 dB @ 1.85 GHz 1.25 dB @ 2.14 GHz 1.2 dB @ 2.14 GHz 1.25 dB @ 2.14 GHz 1.3 dB @ 2.4 GHz 1.35 dB @ 2.4 GHz 1.3 dB @ 2.4 GHz 11.1 dB @ 1.85 GHz 11.9 dB @ 1.85 GHz 14.1 dB @ 1.85 GHz 12.5 dB @ 2.14 GHz 12.3 dB @ 2.14 GHz 13.1 dB @ 2.14 GHz 11.6 dB @ 2.4 GHz 11.2 dB @ 2.4 GHz 11.1 dB @ 2.4 GHz
Noise Figure
Input return loss
Output return loss 12.4 dB @ 1.85 GHz 12.2 dB @ 1.85 GHz 11.7 dB @ 1.85 GHz 12.5 dB @ 2.14 GHz 11.4 dB @ 2.14 GHz 11.3 dB @ 2.14 GHz 12.8 dB @ 2.4 GHz 11.0 dB @ 2.4 GHz 11.0 dB @ 2.4 GHz Reverse Isolation 26.1 dB @ 1.85 GHz 26.3 dB @ 1.85 GHz 26.2 dB @ 1.85 GHz 24.8 dB @ 2.14 GHz 25.0 dB @ 2.14 GHz 25.0 dB @ 2.14 GHz 23.8 dB @ 2.4 GHz 24.0 dB @ 2.4 GHz 24.1 dB @ 2.4 GHz -16 dBm -15 dBm
Input compression -15 dBm point1) Input 3rd order intercept point2)
1) 2)
-7.1 dBm @ 1.8 GHz -6.6 dBm @ 1.8 GHz 4.7 dBm @ 1.8 GHz -5.5 dBm @ 2.14 GHz -4.0 dBm @ 2.14 GHz 4.4 dBm @ 2.14 GHz -3.9 dBm @ 2.4 GHz -3.9 dBm @ 2.4 GHz 4.3 dBm @ 2.4 GHz
Measured at 2.14 GHz -30 dBm per tone, f = 1 MHz
Application Note
3
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration A Configuration A The circuit in Figure 3 shows the minimum parts count version of a BGA622 LNA. There are only three external elements necessary. A DC blocking capacitor at the output and a coil at the power supply are already integrated on chip
Vcc
C3 47pF In L1 2.2nH 1 C1 47pF 2 Q1 BGA622 3 4 Out
Figure 3
Circuit Diagram of Configuration A
Bill of Materials of Configuration A Name Value 47 pF 47 pF 2.2 nH BGA622 Package 0402 0402 0402 SOT-343 Manufacturer various various Toko LL1005-FH Infineon Technologies Function DC block RF bypass Input matching SiGe MMIC
C1 C3 L1
Q1
For measurement graphs of configuration A please refer to the next pages.
Application Note
4
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration A
2 1,8 Noise Figure [dB] 1,6 1,4 1,2 1 0,8 0,6 1,7 1,9 2,1 Frequency [GHz] 2,3 2,5
Figure 4
Noise Figure Configuration A
16 15 Gain [dB] 14 13 12 11 10 1,7 1,9 2,1 Frequency [GHz] 2,3 2,5
Figure 5
Gain Configuration A
Application Note
5
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration A
6 8 10 12
s22
Return Loss [dB]
s11
14 16 1,7 1,9 2,1 Frequency [GHz] 2,3 2,5
Figure 6
Return Loss Configuration A
20 Reverse Isolation [dB]
22
24
26
28 1,7 1,9 2,1 Frequeny [GHz] 2,3 2,5
Figure 7
Reverse Isolation Configuration A
Application Note
6
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration A
5 4 3
K
K, B1
2
B1
1 0 0 1 2 3 Frequency [GHz] 4 5 6
Figure 8
Stability Factor K and Stability Measure B1 of Configuration A
20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 Frequency [GHz] 4 5 6
Figure 9
Application Note
Gain [dB]
Wide Span Gain Configuration A
7
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration A
0 2 4 6 8 10 12 14 16 18 20 0
Return Loss [dB]
s11
s22
1
2
3 Frequency [GHz]
4
5
6
Figure 10
Wide Span Return Loss Configuration A
0 -5 Pout [dBm] -10 -15 -20 -25 -35 -30 -25 -20 -15 -10 Pin [dBm]
Pout
15 14 13 12 11 10 Gain [dB]
Gain
Figure 11
Gain Compression @ 2.14 GHz Configuration A
Application Note
8
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration B Configuration B Figure 12 shows a BGA622 LNA with available power down mode. In the BGA622, an internal high-impedance path exists around the device's internal output DC blocking capacitor, between the output pin and the device's internal shutdown circuitry. Applying Vcc at the Output pin (pin 3) will switch off the BGA622 and only a small supply current of about 0.26 mA flows into the device in shutdown mode. The schematic shows the "PD" (Power Down) connection where the shutdown signal may be applied. Ground or an open circuit at the PD pin will turn on the device. Note that if the Power Down feature is employed, the internal DC blocking capacitor of the BGA622 is bypassed by external circuitry, and therefore some sort of external DC blocking at the output must be employed. This can be either an external output DC blocking capacitor, or the usual image-stripping filter, provided the input of the filter presents a DC open circuit.
Vcc
C3 47pF In L1 2.2nH 1 C1 47pF 2 Q1 BGA622 3 4 C4 47pF Out
L3 47nH PD
C5 47pF
Figure 12
Circuit Diagram Configuration B
Bill of Materials of Configuration B Name Value 47 pF 47 pF 47 pF 47 pF 2.2 nH 47 nH BGA622 Package 0402 0402 0402 0402 0402 0402 SOT-343 Manufacturer various various various various Toko LL 1005-FH Toko LL 1005-FH Infineon Technologies
9
Function DC block RF bypass DC block RF bypass Input matching RF block SiGe MMIC
V3.0, 2001-10
C1 C3 C4 C5 L1 L3
Q1
Application Note
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration B
2 1,8 Noise Figure [dB] 1,6 1,4 1,2 1 0,8 0,6 1,7 1,9 2,1 Frequency [GHz] 2,3 2,5
Figure 13
Noise Figure Configuration B
16 15 Gain [dB] 14 13 12 11 10 1,7 1,9 2,1 Frequency [GHz] 2,3 2,5
Figure 14
Gain Configuration B
Application Note
10
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration B
6 8 10
s11
Return Loss [dB]
12
s22
14 16 1,7 1,9 2,1 Frequency [GHz] 2,3 2,5
Figure 15
Return Loss Configuration B
20 Reverse Isolation [dB]
22
24
26
28 1,7 1,9 2,1 Frequeny [GHz] 2,3 2,5
Figure 16
Reverse Isolation Configuration B
Application Note
11
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration B
5 4 3
K
K, B1
2
B1
1 0 0 1 2 3 Frequency [GHz] 4 5 6
Figure 17
Stability Factor K and Stability Measure B1 of Configuration B
20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 Frequency [GHz] 4 5 6
Figure 18
Application Note
Gain [dB]
Wide Span Gain Configuration B
12
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration B
0 2 4 6 8 10 12 14 16 18 20 0
s11
Return Loss [dB]
s22
1
2
3 Frequency [GHz]
4
5
6
Figure 19
Wide Span Return Loss Configuration B
0 -5 Pout [dBm] -10 -15 -20 -25 -35 -30 -25 -20 -15 -10 Pin [dBm]
Pout
15 14 13 12 11 10 Gain [dB]
Gain
Figure 20
Gain Compression @ 2.14 GHz Configuration B
Application Note
13
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration B
0 Forward Transmission [dB] -10 -20 -30 -40 -50 -60 0 1 2 3 Frequency [GHz] 4 5 6
Figure 21
Forward Transmission in Power Down Mode
0 2,5 Return Loss [dB] 5 7,5 10 12,5 15 17,5 20 0 1
s11
s22
2
3 Frequency [GHz]
4
5
6
Figure 22
Input and Output Return Loss in Power Down Mode
Application Note
14
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration C Configuration C The circuit in Figure 23 shows a way to increase the input 3rd order intercept point of BGA622. L2 and C2 offer low-frequency intermodulation products a low impedance path to ground. This prevents them from modulating the base voltage of the BGA622's internal RF transistor and thus linearity is improved. Typically the input 3rd-order intercept point of BGA622 can be improved by 6 to 10 dB in this manner.
Vcc C2 100nF
L2 22nH In L1 2.2nH 1 C1 47pF 2 Q1 BGA622 3 4
C3 47pF
C4 47pF
Out
PD
L3 47nH
C5 47pF
Figure 23
Circuit Diagram Configuration C
Bill of Materials of Configuration C Name Value 47 pF 100 nF 47 pF 47 pF 47 pF 2.2 nH 22 nH 47 nH BGA622 Package 0402 0603 0402 0402 0402 0402 0402 0402 SOT-343 Manufacturer various various various various various Toko LL 1005-FH Toko LL 1005-FH Toko LL 1005-FH Infineon Technologies
15
Function DC block IIP3 improvement RF bypass DC block RF bypass Input matching RF block RF block SiGe MMIC
V3.0, 2001-10
C1 C2 C3 C4 C5 L1 L2 L3
Q1
Application Note
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration C
2 1,8 Noise Figure [dB] 1,6 1,4 1,2 1 0,8 0,6 1,7 1,9 2,1 Frequency [GHz] 2,3 2,5
Figure 24
Noise Figure Configuration C
16 15 Gain [dB] 14 13 12 11 10 1,7 1,9 2,1 Frequency [GHz] 2,3 2,5
Figure 25
Gain Configuration C
Application Note
16
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration C
6 8 10
s22
Return Loss [dB]
12 14 16 1,7 1,9 2,1 Frequency [GHz] 2,3 2,5
s11
Figure 26
Return Loss Configuration C
20 Reverse Isolation [dB]
22
24
26
28 1,7 1,9 2,1 Frequeny [GHz] 2,3 2,5
Figure 27
Reverse Isolation Configuration C
Application Note
17
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration C
5 4 3
K
K, B1
2
B1
1 0 0 1 2 3 Frequency [GHz] 4 5 6
Figure 28
Stability Factor K and Stability Measure B1 of Configuration C
20 17,5 15 Gain [dB] 12,5 10 7,5 5 2,5 0 0 1 2 3 Frequency [GHz] 4 5 6
Figure 29
Wide Span Gain Configuration C
Application Note
18
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Configuration C
0 2 Return Loss [dB] 4 6 8 10 12 14 16 18 0 1 2 3 Frequency [GHz] 4 5 6
s22 s11
Figure 30
Wide Span Return Loss Configuration C
0 -5 Pout [dBm] -10 -15 -20 -25 -35 -30 -25 -20 -15 -10 Pin [dBm]
Pout Gain
15 14 13 12 11 10 Gain [dB]
Figure 31
Gain Compression @ 2.14 GHz Configuration C
Application Note
19
V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications
Application PCB Application PCB Figure 32 shows the placement of the specific components on the PCB. To place L1 on the board the input 50 transmission line has to have a gap cut in it to allow for the insertion of L1. For this purpose a relief is provided in the solder mask to ease the soldering of the component.
Vcc C2 L2 NA NA C3 L1 C1 14 Q1 23 L3 C5 NA
9.5 mm
In
Out
C4
8 mm
PD
Figure 32
Component Placement on Application PCB
35 m Cu 0.2 mm FR4 35 m Cu 0.8 mm FR4 35 m Cu for mechanical rigidity of PCB
Figure 33
PCB Cross Section
Evaluation boards for the LNA applications described in this application note are available from Infineon Technologies.
Application Note 20 V3.0, 2001-10
The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Revision History: Previous Version: Page Subjects (major changes since last revision) Document's layout has been changed: 2002-Sep. For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com. 2001-10 V3.0
Edition 2001-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany
(c) Infineon Technologies AG 2002.
All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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